| PART |
Description |
Maker |
| IXFN26N90 IXFN25N90 IXFN-26N90 IXFN-25N90 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs Single Die MOSFET
HiPerFET Power MOSFETs Single Die MOSFET 25 A, 900 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET
|
http://
IXYS[IXYS Corporation]
IXYS, Corp.
|
| PSMG100-05 PSMG100_05 PSMG100/05 PSMG10005 |
Power MOSFET
Single MOSFET Die
|
Powersem GmbH
Meder Electronic
|
| IRFC460AB |
TRANSISTOR | MOSFET | N-CHANNEL | 515V V(BR)DSS | CHIP 晶体管| MOSFET的| N沟道| 515V五（巴西）决策支持系统|芯片
HEXFET? Power MOSFET Die in Wafer Form
|
International Rectifier, Corp.
|
| IRFC240 |
HEXFET Power MOSFET Die
|
International Rectifier
|
| STW9N150 W9N150V |
N-channel 1500V - 2.2Ω - 8A - TO-247 Very high voltage PowerMESH Power MOSFET
N-channel 1500V - 2.2Ω - 8A - TO-247 Very high voltage PowerMESH?/a> Power MOSFET
N-channel 1500V - 2.2ohm - 8A - TO-247 - Very high voltage PowerMESH Power MOSFET
N-channel 1500V - 2.2ヘ - 8A - TO-247 Very high voltage PowerMESH⑩ Power MOSFET
|
ST Microelectronics, Inc.
STMICROELECTRONICS[STMicroelectronics]
|
| APT6010B2LL APT6010LLL APT6010LLLG APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 MOSFET
|
Microsemi Corporation
|
| L150-3070502400000 L150-3080500600000 L150-2770500 |
High efficacy and lumens in a multi-die, high power package, enabling low system costs
|
Lumileds Lighting Compa...
|
| IXFN340N07 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS[IXYS Corporation]
|
| IXFN280N07 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| IRFC1404 |
HEXFET? Power MOSFET Die in Wafer Form
|
International Rectifier
|
| IRFC240 |
HEXFET? Power MOSFET Die in Wafer Form
|
International Rectifier
|
| IXFN130N30 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
